首页> 外文OA文献 >Oxygenation of carbon nanotubes: Atomic structure, energetics, and electronic structure
【2h】

Oxygenation of carbon nanotubes: Atomic structure, energetics, and electronic structure

机译:碳纳米管的氧合:原子结构,高能学和电子结构

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

This paper presents an extensive and systematic analysis of the oxygenation of semiconducting and metallic single-wall carbon nanotubes by using the first principles pseudopotential plane wave method. Our study involves the physisorption of oxygen molecules, chemisorption of oxygen atoms and formation of an oxide, and deals with the equilibrium binding geometry and corresponding electronic energy structure. The binding energies of an oxygen molecule physisorbed at different sites are determined by calculating short and long range interactions. The triplet state of the physisorbed oxygen molecule is energetically favorable, whereas the nonmagnetic (spin paired) state yields a relatively stronger binding energy. An oxygen atom is adsorbed on top of the carbon-carbon bond. The zigzag bonds of the nanotubes are weakened and eventually are replaced by a carbon-oxygen-carbon bridge bond. Chemisorption of atomic oxygen and physisorption of an oxygen molecule modify the electronic energy structure of the bare tube in different ways. For a different coverage and pattern, self-consistent field electronic energy structure calculations using the optimized physisorption geometry corresponding to the triplet ground state result in a small energy gap between unoccupied oxygen levels and the top of the valence band of the semiconducting carbon nanotube. These results invalidate the hole doping of the semiconducting carbon nanotube upon the physisorption of oxygen.
机译:本文利用第一性原理准势平面波方法对半导体和金属单壁碳纳米管的氧化进行了广泛而系统的分析。我们的研究涉及氧分子的物理吸附,氧原子的化学吸附和氧化物的形成,并涉及平衡结合几何结构和相应的电子能量结构。通过计算短程和长程相互作用,确定了在不同位置物理吸附的氧分子的结合能。物理吸附的氧分子的三重态在能量上是有利的,而非磁性(自旋成对)态则产生相对较强的结合能。氧原子被吸附在碳-碳键的顶部。纳米管的之字形键被削弱,最终被碳-氧-碳桥键取代。原子氧的化学吸附和氧分子的物理吸附以不同的方式改变了裸管的电子能量结构。对于不同的覆盖范围和模式,使用与三重态基态相对应的优化的物理吸附几何结构进行的自洽场电子能量结构计算会导致未占用的氧含量与半导体碳纳米管的价带顶部之间存在较小的能隙。这些结果在氧的物理吸附后使半导体碳纳米管的空穴掺杂无效。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号